While most advanced semiconductor companies have reached the 28nm
CMOS technology node in manufacturing recently, their leading edge products in
conjunction with 3D chip integration, advanced packaging and organic based
electronics are entering the consumer market. The introduction of new materials
into these products is one of the foremost drivers to enable new
functionalities and advantages. In order to support this, analytical techniques
for process and materials characterization and failure analysis are challenged
to cope with shrinking feature sizes, new failure and degradation modes. In an
increasing number of cases, thin films and structures have to be studied on the
atomic scale. Techniques like TEM, 3D Atom Probe and AFM-based methods are
essential to find root causes of degradation and failure and consequently to
ensure quality and product reliability. But also the conventional imaging,
preparation and microsurgery techniques need to be kept up-to-date to allow
conclusive investigations.
The workshop was aimed to offer an opportunity for exchanging ideas,
sharing experiences, meeting experts who are involved in R&D of analytical
tools at the supplier and the user site. It especially addressed todays and
future challenges to failure analysis in a large variety of
products/applications ranging from silicon-based to organic and advanced carbon-based
electronics. Perspectives
on upcoming developments have also been discussed, like:
· Overview on new devices
concepts: transistors, memories, sensors, etc. and their manufacturing aspects
· Advanced or “exotic” materials
either within the classical silicon-based technologies or as standalone product
(organics, carbon-based)
· Preparation for failure
analysis for the above mentioned
· Failure analysis cases – which
FA methods address which FA cases
· Imaging techniques: optical-,
ion- and electron-beam based, scanning probe …
· Material characterization:
elemental, structural, chemical analysis
· Reliability and
characterization challenges, paradigm changes due to new materials
· State of the art for ESD,
limits and solutions.
The presentations of this 2 days workshop were:
1 - Trend & Challenges
2 - FA for organics
3 - FA for Si-based devices
4 - Analysis flows
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13th
EUFANET Workshop @ ESREF 2012
This EUFANET workshop was held in conjunction with ESREF 2012 at Cagliari (Sardinia, Italy) on
"Finding
the open: from IC to assembly" topic
Failure analysts have a very wide range of techniques
to localize defects. Shorts and leakages defect localization
at IC levels are often resolved by the use of liquid
Crystal, emission microscopy or laser stimulation. Thermography
and magnetic microscopy and other techniques expand
the ability to localize short circuits even at package
and assembly level without direct optical access to
the defect.
Localizing open circuit is more challenging and only
few techniques have been shown to localize open failures
at die level, package level and assembly level. LIVA
(Light Induced Voltage Alteration), Passive Voltage
Contrast, EBAC Emission microscopy on devices running
at high frequency or Laser Voltage Imaging have been
used for true open at die level. RIL (Resistive Interconnection
Localization), SDL (Soft Defect Localization) and other
techniques have been applied for open resistive or runnel
open at IC level. At pack-age and assembly level Magnetic
Microscopy and Lock-in-thermography have also been used
to localize resistive open. Time Domain Reflectometry
is also well known to detect any kind of defect (from
short to open) inducing an impedance change at defect
site but it is challenged by spatial resolution. New
techniques based on TeraHertz wave or on Magnetic Microscopy
(Space Domain Reflectometry) can also target the open
defect localization challenge.
The purpose of this short workshop has been to share experience
on tools and techniques used to localize these open
at die level, package level and assembly level. workshop presentayions are:
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